In the 1980s, Prof. Isamu Akasaki invented two revolutionary technologies:

• a low-temperature buffer layer to obtain a high-quality nitride layer on sapphire substrate
• p-type conduction by Mg doping combined with a post-growth Mg-activation process

These technologies enabled nitride-based LEDs and as a consequence by the late 1990s, blue LEDs became widely available. These technologies are corner stones in the near UV excitation source used in the Kamiyama LED.

In 2004, Prof. Satoshi Kamiyama discovered by accident photoluminescence in doped silicon carbide material resulting from absorption of near UV-photons and was able to explain the phenomena. He further understood that the phenomena could be used to create a highly efficient white LED.

In the early nineties, Prof. Rositza Yakimova realized the need of close to defect free epitaxial silicon carbide layers. After several years of research she succeeded to create a growth reactor producing a close to defect free silicon carbide material.

El-Seed is combining the above ground breaking innovations to create a production system for the next generation white LED – the Kamiyama LED.